Type Designator: HY4008W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 397 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 200 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 195 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 1029 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
Package: TO247
